PART |
Description |
Maker |
2SC36511 2SC3651 |
High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
2SC3807 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3495 |
High-hFE, Low-Frequency General-Purpose Amp Applications High-hFE Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3071 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
2SC3807MP |
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
CSA1362Y |
0.200W Low Frequency PNP SMD Transistor. 15V Vceo, 0.800A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一c)| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|